Package size: DFN package, 5*6mm, 0.65mm pitch, main pinmap: Drain, Source, Gate
Aging test support: test environment temperature -40~125℃, test duration 1000 hours, overcurrent one in and one out 800V/10A functional test.
Product Features: Suitable for chip basic performance debugging and HEMT aging test
Product usage: N-channel HMET power chip aging test, GaN chip aging test, IGBT chip aging test and other power device chip testing requirements;
Product highlights: Resistant to high current, 1 chip single channel is more than 10A, 800V high-voltage pulse test, the probe has strong overcurrent capability, and the probe has low overcurrent internal resistance; it ensures that the heat will not be too large during the functional aging test, and at the same time The test socket shell has an aluminum alloy structure and anodized insulation, taking into account both insulation and heat dissipation.
HEMT DFN5*6 high voltage and high current test socket
